Porous silicon technique for realization of surface micromachined silicon structures with large gaps

被引：8

作者：

Artmann, H ^{[1
]}

Frey, W ^{[1
]}

机构：

[1] Robert Bosch GmbH, Corp Res & Dev, Dept FV FLD, D-70839 Gerlingen, Germany

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1999年 / 74卷 / 1-3期

关键词：

porous silicon; electropolishing; large gap; air damping;

D O I：

10.1016/S0924-4247(98)00332-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of vibrating microsystems are strongly influenced by air damping. With a porous silicon (PorSi) sacrificial layer technique, the substrate gap is enhanced by a factor of > 10 to obtain high Q. Test structures with substrate gaps up to 100 mu m and roughness < 100 nm were realized. Q factor measurements with electrostatic-driven test structures demonstrating a Q factor increase of about 100% at ambient pressure are presented and discussed. (C) 1999 Elsevier,Science S.A. All rights reserved.

引用

页码：104 / 108

页数：5

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