ELECTROSTATIC-COMB DRIVE OF LATERAL POLYSILICON RESONATORS

被引：308

作者：

TANG, WC ^{[1
]}

NGUYEN, TCH ^{[1
]}

JUDY, MW ^{[1
]}

HOWE, RT ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY SENSOR & ACTUATOR CTR,BERKELEY,CA 94720

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 21卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(90)85065-C

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates, the electrostatic drive and sense of polysilicon resonators parallel to the substrate, using an interdigitated capacitor (electrostatic comb). Three experimental methods are used: microscopic observation with continuous or stroboscopic illumination, capacitive sensing using an amplitude-modulation technique and SEM observation. The intrinsic quality factor of the phosphorus-doped low-pressure chemical-vapor-deposited (LPCVD) polysilicon resonators is 49 000 ± 2000, whereas at atmospheric pressure, Q < 100. The finger gap is found to have a more pronounced effect on comb characteristics than finger width or length, as expected from simple theory. © 1990.

引用

页码：328 / 331

页数：4

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