APPLICATION OF POROUS SILICON AS A SACRIFICIAL LAYER

被引:41
作者
LANG, W [1 ]
STEINER, P [1 ]
RICHTER, A [1 ]
MARUSCZYK, K [1 ]
WEIMANN, G [1 ]
SANDMAIER, H [1 ]
机构
[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,W-8046 GARCHING,GERMANY
关键词
D O I
10.1016/0924-4247(93)00655-N
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using porous silicon as a sacrificial layer a surface micromachining (SMM) process with a large distance from the structure to the substrate is realized. The application of this process for making free standing structures of polysilicon and flow channels is described.
引用
收藏
页码:239 / 242
页数:4
相关论文
共 9 条
[1]   AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].
BEALE, MIJ ;
BENJAMIN, JD ;
UREN, MJ ;
CHEW, NG ;
CULLIS, AG .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :622-636
[2]  
Bomchil G., 1988, Microelectronic Engineering, V8, P293, DOI 10.1016/0167-9317(88)90022-6
[3]  
Branebjerg J., 1991, Proceedings. IEEE Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots (Cat. No.91CH2957-9), P221, DOI 10.1109/MEMSYS.1991.114800
[4]  
CANHAM LT, 1991, APPL PHYS LETT, V59, P304
[5]   VISIBLE ELECTROLUMINESCENCE FROM POROUS SILICON [J].
KOSHIDA, N ;
KOYAMA, H .
APPLIED PHYSICS LETTERS, 1992, 60 (03) :347-349
[6]   LIGHT-EMITTING-DIODES IN POROUS SILICON [J].
KOZLOWSKI, F ;
STEINER, P ;
LANG, W ;
SANDMAIER, H .
SENSORS AND ACTUATORS A-PHYSICAL, 1994, 43 (1-3) :153-156
[7]   POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT [J].
LEHMANN, V ;
GOSELE, U .
APPLIED PHYSICS LETTERS, 1991, 58 (08) :856-858
[8]   CURRENT-INDUCED LIGHT-EMISSION FROM A POROUS SILICON DEVICE [J].
RICHTER, A ;
STEINER, P ;
KOZLOWSKI, F ;
LANG, W .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) :691-692
[9]   POROUS SILICON FORMATION MECHANISMS [J].
SMITH, RL ;
COLLINS, SD .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (08) :R1-R22