LIGHT-EMITTING-DIODES IN POROUS SILICON

被引：6

作者：

KOZLOWSKI, F

STEINER, P

LANG, W

SANDMAIER, H

机构：

[1] Fraunhofer Institute for Solid-State Technology, W-8000 Munich 21

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1994年 / 43卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(93)00685-W

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electroluminescent devices in porous silicon technology are presented. The fabrication and characterization of a light-emitting diode are described.

引用

页码：153 / 156

页数：4

共 10 条

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