Modeling boron diffusion in thin-oxide p(+) Si gate technology

A network defect model suitable for use in prc,cess simulation is presented for the diffusion of B in SiO2 anti, in particular, B in the presence of F and H-2. We find that B diffuses via a peroxy linkage defect the concentration in the ode of which changes under different processing conditions. from random walk theory it is possible then to calculate the resulting diffusion coefficients. These results are compared with measured diffusivities and empirical adjustments are made.