Magnetic and transport properties of the V2-VI3 diluted magnetic semiconductor Sb2-xMnxTe3

被引：35

作者：

Dyck, JS

Svanda, P

Lost'ák, P

Horák, J

Chen, W

Uher, C

机构：

[1] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

[2] Univ Pardubice, Fac Chem Technol, Pardubice 53210, Czech Republic

[3] Univ Pardubice, Pardubice 53009, Czech Republic

[4] Acad Sci Czech Republ, Joint Lab Solid State Chem, Pardubice 53009, Czech Republic

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 12期

关键词：

D O I：

10.1063/1.1626803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured electrical and magnetic properties of single crystals of Sb2-xMnxTe3 with x=0-0.045 at temperatures of 2 K to 300 K. Hall effect measurements indicate that each manganese atom donates approximately one hole to the valence band. The magnetic susceptibility is paramagnetic down to 2 K, and both Curie-Weiss and Brillouin analyses show that manganese substitutes for Sb and takes the Mn2+ state with S=5/2. Contrary to the case of III-V host matrices, manganese does not stimulate ferromagnetic order in the family of bulk layered V-2-VI3 diluted magnetic semiconductors, at least in the range of magnetic impurity and carrier concentrations studied here. (C) 2003 American Institute of Physics.

引用

页码：7631 / 7635

页数：5

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