Growth of nanowires

被引:492
作者
Wang, N. [1 ,2 ]
Cai, Y. [1 ,2 ]
Zhang, R. Q. [3 ,4 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Hong Kong Univ Sci & Technol, Inst Nano Sci & Technol, Hong Kong, Hong Kong, Peoples R China
[3] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China
[4] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
关键词
D O I
10.1016/j.mser.2008.01.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The tremendous interest in nanoscale structures such as quantum dots (zero-dimension) and wires (quasi-one-dimension) stems from their size-dependent properties. One-dimensional (ID) semiconductor nanostructures are of particular interest because of their potential applications in nanoscale electronic and optoelectronic devices. For 1D semiconductor nanomaterials to have wide practical application, however, several areas require further development. In particular, the fabrication of desired ID nanomaterials with tailored atomic structures and their assembly into functional devices are still major challenges for nanotechnologists. In this review, we focus on the status of research on the formation of nanowire structures via highly anisotropic growth of nanocrystals of semiconductor and metal oxide materials with an emphasis on the structural characterization of the nucleation, initial growth, defects and interface structures, as well as on theoretical analyses of nanocrystal formation, reactivity and stability. We review various methods used and mechanisms involved to generate 1D nanostructures from different material systems through self-organized growth techniques including vapor-liquid-solid growth, oxide-assisted chemical vapor deposition (without a metal catalyst), laser ablation, thermal evaporation, metal-catalyzed molecular beam epitaxy, chemical beam epitaxy and hydrothermal reaction. 1D nanostructures grown by these technologies have been observed to exhibit unusual growth phenomena and unexpected properties, e.g., diameter-dependent and temperature-dependent growth directions, structural transformation by enhanced photothermal effects and phase transformation induced by the point contact reaction in ultra-thin semiconductor nanowires. Recent progress in controlling growth directions, defects, interface structures, structural transformation, contacts and hetero-junctions in ID nanostructures is addressed. Also reviewed are the quantitative explorations and predictions of some challenging I D nanostructures and descriptions of the growth mechanisms of I D nanostructures, based on the energetic, dynamic and kinetic behaviors of the building block nanostructures and their surfaces and/or interfaces. (c) 2008 Elsevier B.V. All rights reserved.
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页码:1 / 51
页数:51
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