Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode

被引：69

作者：

Choi, CH ^{[1
]}

Jeon, TS

Clark, R

Kwong, DL

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

[2] Schumacher, Carlsbad, CA 92009 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 04期

关键词：

boron penetration; chemical vapor deposition (CVD); hafnium oxide; hafnium oxynitride; thermal stability;

D O I：

10.1109/LED.2003.810881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality, ultrathin chemical vapor deposition (CVD) hafnium oxynitride.(HfOxNy) gate dielectric with poly-silicon (Si) gate electrode has been investigated for the first time. This CVD HfOxNy gate dielectric film remains amorphous after 950 degreesC N-2 annealing. Compared with HfO2 films with poly-Si gate electrode and similar equivalent oxide thickness (EOT), CVD HfOxNy shows significantly reduction in leakage-current density and boron penetration and superior thermal and electrical stability.

引用

页码：215 / 217

页数：3

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