Manipulation of the structural and optical properties of InAs quantum dots by using various InGaAs structures

被引：29

作者：

Kim, JS ^{[1
]}

Lee, JH ^{[1
]}

Hong, SU ^{[1
]}

Han, WS ^{[1
]}

Kwack, HS ^{[1
]}

Lee, CW ^{[1
]}

Oh, DK ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305606, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 10期

关键词：

D O I：

10.1063/1.1621714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural and optical properties of self-assembled InAs quantum dots (QDs) with various InGaAs structures were investigated by transmission electron microscopy (TEM) and photoluminescence (PL). The emission peak position of InAs QDs covered by a 6 nm In0.15Ga0.85As layer was 1.26 mum with PL linewidth of 31 meV, which is narrower than that of QDs in a GaAs matrix. By inserting a 1 nm In0.15Ga0.85As layer below the InAs QD layer with a 6 nm In0.15Ga0.85As overgrowth layer, the emission peak position was redshifted with larger energy-level spacing between the ground states and the first excited states compared to that of QDs with an In0.15Ga0.85As overgrowth layer only. By covering the InAs QDs on a 1 nm In0.15Ga0.85As layer with an 8 nm InxGa1-xAs layer having graded In composition, the emission peak position was 1.32 mum with relatively larger energy-level spacing and narrower PL linewidth compared to QDs covered by an In0.15Ga0.85As layer. The longer emission wavelength with relatively larger energy-level spacing was largely related to the change in the QD shape and size, especially the aspect ratio (height/width), which was confirmed by cross-sectional TEM images. (C) 2003 American Institute of Physics.

引用

页码：6603 / 6606

页数：4

共 18 条

[11] Quantum dot lasers: the birth and future trends
Ledentsov, NN
[J]. SEMICONDUCTORS, 1999, 33 (09) : 946 - 950
[12] Formation of coherent superdots using metal-organic chemical vapor deposition
Ledentsov, NN
Bohrer, J
Bimberg, D
Kochnev, IV
Maximov, MV
Kopev, PS
Alferov, ZI
Kosogov, AO
Ruvimov, SS
Werner, P
Gosele, U
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (08) : 1095 - 1097
[13] Photoluminescence study of in situ annealed InAs quantum dots:: Double-peak emission associated with bimodal size distribution
Lee, H
Lowe-Webb, R
Johnson, TJ
Yang, WD
Sercel, PC
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (24) : 3556 - 3558
[14] The energy level spacing between the ground and first excited states in InAs/GaAs quantum dots as a measure of the zero dimensionality
Lee, UH
Jang, YD
Lee, H
Lee, D
Kim, JS
Leem, JY
Noh, SK
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4) : 129 - 130
[15] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS
MARZIN, JY
GERARD, JM
IZRAEL, A
BARRIER, D
BASTARD, G
[J]. PHYSICAL REVIEW LETTERS, 1994, 73 (05) : 716 - 719
[16] Independent manipulation of density and size of stress-driven self-assembled quantum dots
Mukhametzhanov, I
Heitz, R
Zeng, J
Chen, P
Madhukar, A
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (13) : 1841 - 1943
[17] A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
Nishi, K
Saito, H
Sugou, S
Lee, JS
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (08) : 1111 - 1113
[18] VERTICALLY SELF-ORGANIZED INAS QUANTUM BOX ISLANDS ON GAAS(100)
XIE, QH
MADHUKAR, A
CHEN, P
KOBAYASHI, NP
[J]. PHYSICAL REVIEW LETTERS, 1995, 75 (13) : 2542 - 2545

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