Photoluminescence study of in situ annealed InAs quantum dots:: Double-peak emission associated with bimodal size distribution

被引:58
作者
Lee, H [1 ]
Lowe-Webb, R
Johnson, TJ
Yang, WD
Sercel, PC
机构
[1] Univ Oregon, Inst Mat Sci, Dept Phys, Eugene, OR 97403 USA
[2] Univ Oregon, Oregon Ctr Opt, Eugene, OR 97403 USA
关键词
D O I
10.1063/1.122805
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report a photoluminescence study of self-assembled InAs islands subjected to in situ annealing prior to the growth of a capping layer. A distinctive double-peak feature is observed in the photoluminescence spectra of annealed samples. The power dependence of the photoluminescence spectra reveals that the double-peak emission is associated with the ground-state transition of islands in two different size branches. This observation agrees with a previous study, which demonstrated that the InAs island size distribution bifurcates during post-growth annealing. The temperature dependence of the photoluminescence intensities from samples with bimodal island size distributions illustrates that different thermal activation energies for carrier emission are associated with islands in different size branches. (C) 1998 American Institute of Physics. [S0003-6951(98)03050-2].
引用
收藏
页码:3556 / 3558
页数:3
相关论文
共 16 条
  • [1] Temperature effects on the radiative recombination in self-assembled quantum dots
    Fafard, S
    Raymond, S
    Wang, G
    Leon, R
    Leonard, D
    Charbonneau, S
    Merz, JL
    Petroff, PM
    Bowers, JE
    [J]. SURFACE SCIENCE, 1996, 361 (1-3) : 778 - 782
  • [2] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES
    GOLDSTEIN, L
    GLAS, F
    MARZIN, JY
    CHARASSE, MN
    LEROUX, G
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1099 - 1101
  • [3] Grundmann M, 1996, APPL PHYS LETT, V68, P979, DOI 10.1063/1.116118
  • [4] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS
    KIRSTAEDTER, N
    LEDENTSOV, NN
    GRUNDMANN, M
    BIMBERG, D
    USTINOV, VM
    RUVIMOV, SS
    MAXIMOV, MV
    KOPEV, PS
    ALFEROV, ZI
    RICHTER, U
    WERNER, P
    GOSELE, U
    HEYDENREICH, J
    [J]. ELECTRONICS LETTERS, 1994, 30 (17) : 1416 - 1417
  • [5] In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)
    Kobayashi, NP
    Ramachandran, TR
    Chen, P
    Madhukar, A
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (23) : 3299 - 3301
  • [6] Formation of InAs/GaAs quantum dots by molecular beam epitaxy: Reversibility of the islanding transition
    Lee, H
    LoweWebb, RR
    Yang, WD
    Sercel, PC
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (16) : 2325 - 2327
  • [7] Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction
    Lee, H
    Lowe-Webb, R
    Yang, WD
    Sercel, PC
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (07) : 812 - 814
  • [8] Nucleation transitions for InGaAs Islands on vicinal (100) GaAs
    Leon, R
    Senden, TJ
    Kim, Y
    Jagadish, C
    Clark, A
    [J]. PHYSICAL REVIEW LETTERS, 1997, 78 (26) : 4942 - 4945
  • [9] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS
    LEONARD, D
    POND, K
    PETROFF, PM
    [J]. PHYSICAL REVIEW B, 1994, 50 (16): : 11687 - 11692
  • [10] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES
    LEONARD, D
    KRISHNAMURTHY, M
    REAVES, CM
    DENBAARS, SP
    PETROFF, PM
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (23) : 3203 - 3205