Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique

被引：30

作者：

Aleksiejunas, R ^{[1
]}

Sudzius, M ^{[1
]}

Gudelis, V ^{[1
]}

Malinauskas, T ^{[1
]}

Jarasiunas, K ^{[1
]}

Fareed, Q ^{[1
]}

Gaska, R ^{[1
]}

Shur, MS ^{[1
]}

Zhang, J ^{[1
]}

Yang, J ^{[1
]}

Kuokstis, E ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Vilnius Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303261

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Time-resolved four-wave mixing has been performed in InGaN/GaN/sapphire heterostructures using picosecond pulses at 355 nm for carrier excitation. In-plane diffusion and recombination of carriers, confined in the front layer of 50-nm-thick InGaN, were monitored by a delayed probe beam at 1064 nm. Decay times of free carrier gratings with various spatial periods allowed determination of bipolar diffusion coefficient D = 2.1 cm(2)/s, effective carrier lifetime of 470 ps, and estimate the corresponding hole mobility 40 cm(2)/Vs at carrier density of about 10(18) cm(-3). (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2686 / 2690

页数：5

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