Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate

被引：27

作者：

Alouane, M. H. Hadj ^{[1
,2
]}

Anufriev, R. ^{[1
]}

Chauvin, N. ^{[1
]}

Khmissi, H. ^{[2
]}

Naji, K. ^{[3
]}

Ilahi, B. ^{[2
]}

Maaref, H. ^{[2
]}

Patriarche, G. ^{[4
]}

Gendry, M. ^{[3
]}

Bru-Chevallier, C. ^{[1
]}

机构：

[1] Univ Lyon, INSA Lyon, INL, CNRS,UMR5270, F-69621 Villeurbanne, France

[2] Fac Sci, LMON, Monastir 5019, Tunisia

[3] Univ Lyon, Ecole Cent Lyon, INL, CNRS,UMR5270, F-69134 Ecully, France

[4] CNRS, UPR20, LPN, F-91460 Marcoussis, France

来源：

NANOTECHNOLOGY | 2011年 / 22卷 / 40期

关键词：

INAS QUANTUM DOTS; INDIUM-PHOSPHIDE NANOWIRES; PHOTOLUMINESCENCE; GROWTH; POLARIZATION; EMISSION; SILICON;

D O I：

10.1088/0957-4484/22/40/405702

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Optical properties of wurtzite InP/InAs/InP core-shell nanowires grown on silicon substrates by solid source molecular beam epitaxy are studied by means of photoluminescence and microphotoluminescence. The growth conditions were optimized to obtain purely wurtzite radial quantum wells emitting in the telecom bands with a radiative lifetime in the 5-7 ns range at 14 K. Optical studies on single nanowires reveal that the polarization is mainly parallel to the growth direction. A 20-fold reduction of the photoluminescence intensity is observed between 14 and 300 K confirming the very good quality of the nanowires.

引用

页数：6

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