Low-temperature single-crystal Si TFT's fabricated on Si films processed via sequential lateral solidification

被引：86

作者：

Crowder, MA ^{[1
]}

Carey, PG

Smith, PM

Sposili, RS

Cho, HS

Im, JS

机构：

[1] Columbia Univ, Mat Sci Program, New York, NY 10027 USA

[2] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 08期

关键词：

excimer laser crystallization; sequential lateral solidification; super-lateral growth; thin-film transistors;

D O I：

10.1109/55.704408

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nonhydrogenated, n-channel, lo vv-temperature-processed, single-crystal Si thin-film transistors (TFT's) have been fabricated on Si thin films prepared via sequential lateral solidification (SLS), The device characteristics of the resulting SLS TFT's exhibit properties and a le, el of performance that are superior to poly crystalline Si-based TFT's and are comparable to similar devices fabricated on silicon-on-insulator (SOI) substrates or bulk-Si wafers. We attribute these high-performance device characteristics to the absence of high-angle grain-boundaries within the active channel portion of the TFT's.

引用

页码：306 / 308

页数：3

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