Effect of humidity on nano-oxidation of p-Si(001) surface

被引：42

作者：

Kuramochi, H

Ando, K

Yokoyama, H

机构：

[1] AIST, SYNAF, Res Consortium, Tsukuba, Ibaraki 3058568, Japan

[2] Seiko Instruments Inc, Shizuoka 4101393, Japan

[3] Nanotechnol Res Inst, AIST, Tsukuba, Ibaraki 3058568, Japan

来源：

SURFACE SCIENCE | 2003年 / 542卷 / 1-2期

关键词：

oxidation; atomic force microscopy; silicon; water;

D O I：

10.1016/S0039-6028(03)00912-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of humidity on the nano-oxidation of p-Si(0 0 1) using an atomic force microscope is systematically studied at the relative humidity from 40% to 80%. Nanometer scale structures are fabricated at various relative humidities, applied voltages, exposure times and tip speeds. The size and shape of the fabricated oxide and contribution of the ionic diffusion to the process changed depending on the relative humidity. It was proved that the humidity is a noteworthy parameter for nano-oxidation and needs more careful consideration on equal terms with the oxidation voltage. The first systematic and fundamental information of the humidity effects on the process over a wide humidity range is provided for further study on meniscus formation. (C) 2003 Elsevier B.V. All rights reserved.

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页码：56 / 63

页数：8

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