Electric field induced changes in the coercivity of a thin-film ferromagnet

被引:24
作者
Fowley, C. [1 ]
Rode, K.
Oguz, K.
Kurt, H.
Coey, J. M. D.
机构
[1] Trinity Coll Dublin, CRANN, Dublin, Ireland
基金
爱尔兰科学基金会;
关键词
MAGNETIC-ANISOTROPY; MAGNETOCRYSTALLINE ANISOTROPY;
D O I
10.1088/0022-3727/44/30/305001
中图分类号
O59 [应用物理学];
学科分类号
摘要
Data are presented which indicate a modification of magnetic anisotropy in the MgO/CoFeB/Pd and MgO/CoFeB/Pt systems, using electric fields of order 500 MV m(-1) (0.5 V nm(-1)) applied across a thermally grown SiO2 as a gate dielectric. The effect is most prominent at low temperature (12 K) and is manifested as a small change in coercivity. The sign of the effect depends on the choice of both capping layer and annealing temperature. The results suggest that both interfaces play a role in the appearance of perpendicular magnetic anisotropy in these thin-film stacks, and not just the interface with MgO.
引用
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页数:5
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