Characteristics of tin nitride thin-film negative electrode for thin-film microbattery

被引：43

作者：

Park, KS ^{[1
]}

Park, YJ

Kim, MK

Son, JT

Kim, HG

Kim, SJ

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] Elect & Telecommun Res Inst, Bettery Technol Team, Telecommun Basic Res Lab, Yusong Gu, Taejon 305350, South Korea

[3] Donghae Univ, Dept Elect Engn, Donghae, Kangwon Do, South Korea

来源：

JOURNAL OF POWER SOURCES | 2001年 / 103卷 / 01期

关键词：

tin nitride; thin film; microbattery; lithium battery; negative electrode; anode;

D O I：

10.1016/S0378-7753(01)00829-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Tin nitride is a relatively unknown compound. In this study, the tin nitride thin film is examined as a negative electrode for a thin-film microbattery. Reactive rf magnetron sputtering is used for deposition of films with varying deposition temperature. The charge-discharge properties of thin films deposited at room temperature, 100 and 200 degreesC are found to be satisfactory. As the irreversible capacity fraction increases, rechargeability is improved. Finally, it is suggested that the electrochemical characteristics of tin nitride are similar to those of the tin oxide system. The charge-discharge characteristics are investigated in several ways. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：67 / 71

页数：5

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