Surface photovoltage spectroscopy of a GaAs/AlGaAs heterojunction bipolar transistor

被引：16

作者：

Mishori, B ^{[1
]}

Leibovitch, M

Shapira, Y

Pollak, FH

Streit, DC

Wojtowicz, M

机构：

[1] Tel Aviv Univ, Fac Engn, Dept Elect Engn Phys Elect, IL-69978 Tel Aviv, Israel

[2] CUNY Brooklyn Coll, Dept Phys, Brooklyn, NY 11210 USA

[3] CUNY Brooklyn Coll, New York State Ctr Adv Technol Ultrafast Photon M, Brooklyn, NY 11210 USA

[4] TRW Co Inc, Div Elect & Technol, Redondo Beach, CA 90278 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 05期

关键词：

D O I：

10.1063/1.121936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic properties of a GaAs/AlGaAs heterojunction bipolar transistor (HBT) structure have been studied by surface photovoltage spectroscopy. The p-base band-gap narrowing has been determined and confirmed by numerical simulation. Based on the shape of the surface photovoltage spectrum, it is possible to monitor the doping level and evaluate the minority-carrier mobility. This work; demonstrates the power of the technique as a precision tool for HBT quality control. (C) 1998 American Institute of Physics.

引用

页码：650 / 652

页数：3

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