BAND-GAP NARROWING IN NOVEL III-V SEMICONDUCTORS

被引：219

作者：

JAIN, SC ^{[1
]}

MCGREGOR, JM ^{[1
]}

ROULSTON, DJ ^{[1
]}

机构：

[1] UNIV WATERLOO,DEPT ELECT & COMP ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 07期

关键词：

D O I：

10.1063/1.346291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A predictive model for band-gap narrowing has been applied to several III-V semiconductors. Band-gap narrowing is expressed as ΔEg =AN1/3+BN1/4+CN1/2; values for A, B, and C are predicted for these materials. The commonly used N1/3 relation is shown to be valid for the p-type materials considered, but not for n-type materials.

引用

页码：3747 / 3749

页数：3

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