RECENT ADVANCES IN THE PHYSICS OF SILICON P-N-JUNCTION SOLAR-CELLS INCLUDING THEIR TRANSIENT-RESPONSE

被引：17

作者：

JAIN, SC ^{[1
]}

HEASELL, EL ^{[1
]}

ROULSTON, DJ ^{[1
]}

机构：

[1] UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA

来源：

PROGRESS IN QUANTUM ELECTRONICS | 1987年 / 11卷 / 02期

关键词：

DARK CURRENTS - HEAVY DOPING EFFECTS - MINORITY CARRIERS - SERIES RESISTANCE - SILICON P-N JUNCTION;

D O I：

10.1016/0079-6727(87)90004-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：105 / 204

页数：100

共 139 条

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J].

ABRAM, RA ;

REES, GJ ;

WILSON, BLH .

ADVANCES IN PHYSICS, 1978, 27 (06) :799-892

[2] A NEW METHOD FOR THE MEASUREMENT OF SERIES RESISTANCE OF SOLAR-CELLS [J].

AGARWAL, SK ;

MURALIDHARAN, R ;

AGARWALA, A ;

TEWARY, VK ;

JAIN, SC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (09) :1643-1646

[3] TEMPERATURE EFFECTS IN SILICON SOLAR-CELLS [J].

AGARWALA, A ;

TEWARY, VK ;

AGARWAL, SK ;

JAIN, SC .

SOLID-STATE ELECTRONICS, 1980, 23 (10) :1021-1028

[4]

[Anonymous], 1955, J APPL PHYS, DOI [10.1063/1.1722034, DOI 10.1063/1.1722034]

[5]

Arndt R. A., 1975, 11th IEEE Photovoltaic Specialists Conference, P40

[6] DIFFUSION LENGTH DETERMINATION IN P-N-JUNCTION DIODES AND SOLAR-CELLS [J].

ARORA, ND ;

CHAMBERLAIN, SG ;

ROULSTON, DJ .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :325-327

[7] CARRIER ACCUMULATION IN GERMANIUM [J].

ARTHUR, JB ;

GIBSON, AF ;

GUNN, JB .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (07) :697-704

[8] CURRENT GAIN AT L-H JUNCTIONS IN GERMANIUM [J].

ARTHUR, JB ;

GIBSON, AF ;

GUNN, JB .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (07) :705-711

[9] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J].

BARBER, HD .

SOLID-STATE ELECTRONICS, 1967, 10 (11) :1039-&

[10]

BELL RO, 1978, IEEE PHOTOVOLTAIC SP, P89

← 1 2 3 4 5 6 7 8 9 10 →