RECENT ADVANCES IN THE PHYSICS OF SILICON P-N-JUNCTION SOLAR-CELLS INCLUDING THEIR TRANSIENT-RESPONSE

被引：17

作者：

JAIN, SC ^{[1
]}

HEASELL, EL ^{[1
]}

ROULSTON, DJ ^{[1
]}

机构：

[1] UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA

来源：

PROGRESS IN QUANTUM ELECTRONICS | 1987年 / 11卷 / 02期

关键词：

DARK CURRENTS - HEAVY DOPING EFFECTS - MINORITY CARRIERS - SERIES RESISTANCE - SILICON P-N JUNCTION;

D O I：

10.1016/0079-6727(87)90004-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：105 / 204

页数：100

共 139 条

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