A SIPOS-SI HETEROJUNCTION TRANSISTOR

被引：24

作者：

MATSUSHITA, T

HAYASHI, H

NORIKAZU, OU

YAMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 01期

关键词：

D O I：

10.7567/JJAPS.20S1.75

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：75 / 81

页数：7

共 10 条

[1]

ADACHI T, 1979, ELECTROCHEM SOC C, V79, P444

[2]

de Graaff H. C., 1977, Solid-State Electronics, V20, P515, DOI 10.1016/S0038-1101(77)81008-3

[3] ELECTRONIC PROPERTIES OF SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS [J].

HAMASAKI, M ;

ADACHI, T ;

WAKAYAMA, S ;

KIKUCHI, M .

SOLID STATE COMMUNICATIONS, 1977, 21 (06) :591-593

[4] ANNEALING OF SURFACE-STATES IN POLYCRYSTALLINE-SILICON-GATE CAPACITORS [J].

HICKMOTT, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :723-733

[5] OPTIMUM DESIGN OF POWER TRANSISTOR SWITCHES [J].

HOWER, PL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) :426-435

[6] SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) PASSIVATION TECHNOLOGY [J].

MATSUSHITA, T ;

AOKI, T ;

OTSU, T ;

YAMOTO, H ;

HAYASHI, H ;

OKAYAMA, M ;

KAWANA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 :35-40

[7] SILICON HETEROJUNCTION TRANSISTOR [J].

MATSUSHITA, T ;

OHUCHI, N ;

HAYASHI, H ;

YAMOTO, H .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :549-550

[8] HIGHLY RELIABLE HIGH-VOLTAGE TRANSISTORS BY USE OF SIPOS PROCESS [J].

MATSUSHITA, T ;

AOKI, T ;

OHTSU, T ;

YAMOTO, H ;

HAYASHI, H ;

OKAYAMA, M ;

KAWANA, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) :826-830

[9]

Milnes A. G., 1972, HETEROJUNCTIONS META, P58

[10]

YAMOTO H, 1979, ELECTROCHEM SOC C, V79, P447

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