SILICON HETEROJUNCTION TRANSISTOR

被引：49

作者：

MATSUSHITA, T

OHUCHI, N

HAYASHI, H

YAMOTO, H

机构：

[1] Semiconductor Division, SONY Corporation, Atsugi, Kanagawa

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 07期

关键词：

D O I：

10.1063/1.91174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas.

引用

页码：549 / 550

页数：2

共 9 条

[1]

ADACHI T, 1979, 155TH ECS M

[2]

Aoki T., 1975, Electrochemical Society Spring Meeting. (Extended abstracts), P352

[3] RADIATION-INDUCED INCREASE IN SURFACE RECOMBINATION VELOCITY OF THERMALLY OXIDIZED SILICON STRUCTURES [J].