VERY HEAVILY DOPED SEMICONDUCTORS AS A NEARLY-FREE-ELECTRON-GAS SYSTEM

被引：17

作者：

BERGGREN, KF

SERNELIUS, BE

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 1-2期

关键词：

D O I：

10.1016/0038-1101(85)90204-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：11 / 15

页数：5

共 15 条

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