PHOTO-LUMINESCENCE IN HEAVILY DOPED SI-B AND SI-AS

被引：51

作者：

SCHMID, PE ^{[1
]}

THEWALT, MLW ^{[1
]}

DUMKE, WP ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 38卷 / 11期

关键词：

D O I：

10.1016/0038-1098(81)90024-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1091 / 1093

页数：3

共 9 条

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REES, GJ ;

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[2] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J].

BARBER, HD .

SOLID-STATE ELECTRONICS, 1967, 10 (11) :1039-&

[3]

BENOIT C, 1968, PHYS STATUS SOLIDI, V35, P599

[4] ELECTRON-HOLE DROPLETS AND IMPURITY BAND STATES IN HEAVILY DOPED SI(P) - PHOTOLUMINESCENCE EXPERIMENTS AND THEORY [J].

BERGERSEN, B ;

ROSTWOROWSKI, JA ;

ESWARAN, M ;

PARSONS, RR .

PHYSICAL REVIEW B, 1976, 14 (04) :1633-1648

[5] ENERGY-GAP IN SI AND GE - IMPURITY DEPENDENCE [J].

MAHAN, GD .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2634-2646

[6] ORIGIN OF PHOTO-LUMINESCENCE IN HEAVILY DOPED SILICON [J].

PARSONS, RR .

SOLID STATE COMMUNICATIONS, 1979, 29 (11) :763-766

[7] PHOTO-LUMINESCENCE IN HEAVILY-DOPED SI(P) [J].

PARSONS, RR .

CANADIAN JOURNAL OF PHYSICS, 1978, 56 (07) :814-826

[8]

PARSONS RR, 1979, 14TH P INT C PHYS SE, P1267

[9]

SCHMID PE, UNPUBLISHED

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