PHOTO-LUMINESCENCE IN HEAVILY-DOPED SI(P)

被引：20

作者：

PARSONS, RR

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1978年 / 56卷 / 07期

关键词：

D O I：

10.1139/p78-109

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：814 / 826

页数：13

共 26 条

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[7] IMPURITY BAND STATES IN SI(P) [J].

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[10]

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