ORIGIN OF PHOTO-LUMINESCENCE IN HEAVILY DOPED SILICON

被引：40

作者：

PARSONS, RR

机构：

[1] Physics Department, The University of British Columbia, Vancouver

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 29卷 / 11期

关键词：

D O I：

10.1016/0038-1098(79)90156-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The origin of the photoluminescence in heavily-doped silicon is examined. Transient photoluminescence data for Si(P) are presented and used to identify the Low Level" emission bands in terms of recombination of impurity band electrons with holes bound to acceptor sites. The "High Level" bands are attributed to recombination of impurity band electrons with free holes. The energies of the band gap and optical band gap in heavily-doped silicon are determined from the photoluminescence measurements. © 1979."

引用

页码：763 / 766

页数：4

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