ELECTRONIC-PROPERTIES OF HEAVILY-DOPED N-TYPE SILICON

被引：4

作者：

SELLONI, A ^{[1
]}

PANTELIDES, ST ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90446-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：78 / 80

页数：3

共 14 条

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J].

ABRAM, RA ;

REES, GJ ;

WILSON, BLH .

ADVANCES IN PHYSICS, 1978, 27 (06) :799-892

[2] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE SI [J].

BALKANSKI, M ;

AZIZA, A ;

AMZALLAG, E .

PHYSICA STATUS SOLIDI, 1969, 31 (01) :323-+

[3] BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J].

BERGGREN, KF ;

SERNELIUS, BE .

PHYSICAL REVIEW B, 1981, 24 (04) :1971-1986

[4] MULTIPLE-SCATTERING APPROACH TO THE FORMATION OF THE IMPURITY BAND IN SEMICONDUCTORS [J].

GHAZALI, A ;

SERRE, J .

PHYSICAL REVIEW LETTERS, 1982, 48 (13) :886-889

[5] EFFECT OF ELECTRON INTERACTION ON BAND-GAP OF EXTRINSIC SEMICONDUCTORS [J].

INKSON, JC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (07) :1177-1183

[6]

Keyes R. W., 1977, Comments on Solid State Physics, V7, P149

[7] ENERGY-GAP IN SI AND GE - IMPURITY DEPENDENCE [J].

MAHAN, GD .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2634-2646

[8]

PANTELIDES ST, UNPUB

[9] OPTICAL-ABSORPTION IN HEAVILY DOPED SILICON [J].

SCHMID, PE .

PHYSICAL REVIEW B, 1981, 23 (10) :5531-5536

[10] PHOTO-LUMINESCENCE IN HEAVILY DOPED SI-B AND SI-AS [J].

SCHMID, PE ;

THEWALT, MLW ;

DUMKE, WP .

SOLID STATE COMMUNICATIONS, 1981, 38 (11) :1091-1093

← 1 2 →