MULTIPLE-SCATTERING APPROACH TO THE FORMATION OF THE IMPURITY BAND IN SEMICONDUCTORS

被引：33

作者：

GHAZALI, A

SERRE, J

机构：

来源：

PHYSICAL REVIEW LETTERS | 1982年 / 48卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.48.886

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：886 / 889

页数：4

共 16 条

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