ELECTRONIC-STRUCTURE AND SPECTRA OF HEAVILY DOPED NORMAL-TYPE SILICON

被引：55

作者：

SELLONI, A ^{[1
]}

PANTELIDES, ST ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1982年 / 49卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.49.586

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：586 / 589

页数：4

共 23 条

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