Electrode dependence of resistance switching in polycrystalline NiO films

被引:101
作者
Seo, S [1 ]
Lee, MJ
Kim, DC
Ahn, SE
Park, BH
Kim, YS
Yoo, IK
Byun, IS
Hwang, IR
Kim, SH
Kim, JS
Choi, JS
Lee, JH
Jeon, SH
Hong, SH
Park, BH
机构
[1] Samsung Adv Inst Technol, Suwon 440600, South Korea
[2] Konkuk Univ, Dept Phys, Seoul 143701, South Korea
[3] Konkuk Univ, Res Ctr Organ Display, Seoul 143701, South Korea
基金
新加坡国家研究基金会;
关键词
D O I
10.1063/1.2150580
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated resistance switching in top-electrode/NiO/Pt structures where the top electrode was Au, Pt, Ti, or Al. For Pt/NiO/Pt and Au/NiO/Pt structures with ohmic contacts, the effective electric field inside the film was high enough to induce trapping or detrapping at defect states and thus resistance switching. For a Ti/NiO/Pt structure with well-defined Schottky contact at Ti/NiO interface accompanied by an appreciable voltage drop, the effective electric field inside the NiO film was not enough to induce resistance switching. For an Al/NiO/Pt structure with a low Schottky barrier at the Al/NiO interface, resistance switching could be induced at a higher voltage since the voltage drop at the Al/NiO interface was not negligible but small.
引用
收藏
页码:1 / 3
页数:3
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