Organic light emitting transistors

被引：43

作者：

Kudo, K ^{[1
]}

机构：

[1] Chiba Univ, Fac Engn, Chiba 2638522, Japan

来源：

CURRENT APPLIED PHYSICS | 2005年 / 5卷 / 04期

关键词：

organic light emitting diode; organic light emitting transistor; evaporated films; static induction transistor; thin film transistor; Schottky gate;

D O I：

10.1016/j.cap.2003.11.095

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Organic light emitting transistors which are vertically combined with the organic static induction transistor and organic light emitting diode are fabricated and the device characteristics depending on the structure of gate electrode are investigated. By optimizing the layer thickness and the size of slit-type Al gate electrode, high luminance modulation by low gate voltage as high as 1 V are obtained. The organic light emitting transistor described here is a suitable element for flexible sheet displays. (c) 2004 Published by Elsevier B.V.

引用

页码：337 / 340

页数：4

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2-9

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