New cadmium-free buffer layers as heterojunction partners on Cu(In,Ga)(S,Se)2 thin film solar cells

被引：1

作者：

Eisele, W ^{[1
]}

Ennaoui, A ^{[1
]}

Schubert-Bischoff, P ^{[1
]}

Giersig, M ^{[1
]}

Pettenkofer, C ^{[1
]}

Krauser, J ^{[1
]}

Lux-Steiner, M ^{[1
]}

Riedle, T ^{[1
]}

Esser, N ^{[1
]}

Zweigart, S ^{[1
]}

Karg, F ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

Cu(In; Ga)(SSe)(2); Zn(Se; OH); buffer layer; interface; Micro-Raman spectroscopy; TEM; NRA; XPS;

D O I：

10.1109/PVSC.2000.915960

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A Zn(Se,OH) buffer layer deposited by chemical bath process on Cu(In,Ga)(S,Se)(2) (CIGSS) absorbers is investigated. Before deposition of the actual ZnSe layer, the absorber is immersed in a Zn-containing solution (Zn treatment). Transmission electron microscopy (TEM) pictures of the buffer layer exhibit two different areas: A dark structured layer containing small crystals of ZnSe and a bright amorphous layer, which is thought to consist of Zn(OH)2 predominantly. We suggest that already during the Zn treatment an amorphous buffer layer is growing. Xray photoelectron spectroscopy (XPS) measurements of the Cu-2P and O-1s peak of Zn-treated absorbers show a coverage with an OH component, attributed to Zn(OH)2. Nuclear reaction analysis (NRA) measurements reveal a peak hydrogen concentration of 8x10(21) H/cm(3) in the buffer layer. Micro-Raman spectra show a shift of the LO branch of ZnSe from 250 cm(-1) to 258 cm(-1).

引用

页码：692 / 695

页数：4

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