MEASUREMENT AND ANALYSIS OF HYDROGEN DEPTH PROFILES IN MOS-STRUCTURES BY USING THE N-15 NUCLEAR-REACTION METHOD

The application of the H-1(N-15, alpha gamma)C-12 nuclear reaction analysis method promises to become the preferred measurement tool for hydrogen depth profiling in solids. A depth resolution of approximately 5 nm in the near surface region and a sensitivity < 50 ppma makes it the best choice for the analysis of thin films such as the metal-oxide-silicon system in semiconductor research. The experimental setup for depth profiling at the authors' laboratory, which wail recently improved, is presented and its main features are highlighted. The recorded measurement data need to undergo a deconvolution procedure which is solved by the use of a computer program. Hydrogen depth profiles of aluminum and poly-Si gate metal-oxide-silicon capacitors are presented to show the usefulness of this deconvolution. Applying physically justifiable parameters, a deeper insight at the important interface region is possible.