INITIAL HYDROGEN-ION PROFILES DURING INTERFACE TRAP FORMATION IN MOS DEVICES

Detailed predictions based on the H+ transport model for interface trap creation require knowledge of the initial (post-irradiation) spatial distribution of H+ ions through the oxide. Proposed H+ distributions from the literature are evaluated by comparison of experimental data with calculations based on the model. We find that the experimental data are consistent with creation of radiation-induced H+ ions both within the bulk of the oxide and preferentially in the vicinity of the SiO2-Si interface (but not preferentially in the vicinity of the SiO2-gate interface). The balance between bulk and near-interface H+ generation appears dependent on the device fabrication process.