INTERFACE TRAP FORMATION VIA THE 2-STAGE H+ PROCESS

[1] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1520 - 1525

[2] TIME-DEPENDENT INTERFACE TRAP EFFECTS IN MOS DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) : 1160 - 1167

[3] INTERFACE STATE GENERATION ASSOCIATED WITH HOLE TRANSPORT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) : 448 - 449

[4] AMPHOTERIC DEFECTS AT THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 662 - 664

[5] Griscom D., 1988, PHYS CHEM SIO2 SI SI, P287

[6] DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2524 - 2533

[7] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 42 - 53

[8] Grunthaner F. J., 1986, Material Science Reports, V1, P65, DOI 10.1016/S0920-2307(86)80001-9

[9] RELATIONSHIP BETWEEN TRAPPED HOLES AND INTERFACE STATES IN MOS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 590 - 591

[10] 2-CARRIER NATURE OF INTERFACE-STATE GENERATION IN HOLE TRAPPING AND RADIATION-DAMAGE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 58 - 60

[1] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1520 - 1525

[2] TIME-DEPENDENT INTERFACE TRAP EFFECTS IN MOS DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) : 1160 - 1167

[3] INTERFACE STATE GENERATION ASSOCIATED WITH HOLE TRANSPORT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) : 448 - 449

[4] AMPHOTERIC DEFECTS AT THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 662 - 664

[5] Griscom D., 1988, PHYS CHEM SIO2 SI SI, P287

[6] DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2524 - 2533

[7] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 42 - 53

[8] Grunthaner F. J., 1986, Material Science Reports, V1, P65, DOI 10.1016/S0920-2307(86)80001-9

[9] RELATIONSHIP BETWEEN TRAPPED HOLES AND INTERFACE STATES IN MOS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 590 - 591

[10] 2-CARRIER NATURE OF INTERFACE-STATE GENERATION IN HOLE TRAPPING AND RADIATION-DAMAGE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 58 - 60