TIME-DEPENDENT INTERFACE TRAP EFFECTS IN MOS DEVICES

被引:49
作者
BOESCH, HE
机构
[1] Harry Diamond Lab, Adelphi, MD, USA
关键词
Electronic Properties - Semiconducting Silicon - Silica;
D O I
10.1109/23.25434
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A fast charge-pumping technique was used to measure the radiation- induced buildup of interface traps in MOS structures after exposure to short-pulse irradiation. A strong dependence of the time scale of the late-time buildup (t > 10 ms) on the oxide electric field at very early times (10 μs to 0.5 ms) is explained in terms of a positive-ion-drift model. The early-time buildup (t 2/Si interface.
引用
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页码:1160 / 1167
页数:8
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