RELATIONSHIP BETWEEN TRAPPED HOLES, POSITIVE-IONS, AND INTERFACE STATES IN IRRADIATED SI-SIO2 STRUCTURES

被引：22

作者：

KENKARE, PU

LYON, SA

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 22期

关键词：

D O I：

10.1063/1.102358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2328 / 2330

页数：3

共 19 条

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