HgCdTe on Si: Present status and novel buffer layer concepts

被引：16

作者：

Golding, TD ^{[1
]}

Holland, OW

Kim, MJ

Dinan, JH

Almeida, LA

Arias, JM

Bajaj, J

Shih, HD

Kirk, WP

机构：

[1] Univ N Texas, Dept Phys & Mat Sci, Denton, TX 76203 USA

[2] NVESD, Ft Belvoir, VA 22060 USA

[3] Rockwell Sci Co, Camarillo, CA 93012 USA

[4] DRS Infrared Technol, Dallas, TX 75374 USA

[5] Univ Texas, Dept Elect Engn, Arlington, TX 76019 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2003年 / 32卷 / 08期

关键词：

HgCdTE; Si; buffer layers; wafer bonding;

D O I：

10.1007/s11664-003-0205-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss buffer-layer concepts for the synthesis of low defect-density HgCdTe epilayers on Si for both hybrid and monolithically integrated, infrared focal-plane arrays (IRFPAa). The primary technical problems to overcome include the 19% lattice-parameter mismatch between HgCdTe and Si, and the (211)B surface orientation required for molecular-beam epitaxy (MBE), the growth technique of choice for HgCdTe. We provide a general overview of IRFPAs, motivations for realizing HgCdTe on Si, the current state-of-the-art parameters as a baseline, and three novel buffer-layer concepts and technologies based on (1) obedient GeSi films on SiO2, (2) wafer bonding, and (3) chalcogenides.

引用

页码：882 / 889

页数：8

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