Self-organized growth of InN-nanocolumns on p-Si(111) by MBE

被引：20

作者：

Denker, Christian ^{[1
]}

Malindretos, Joerg ^{[1
]}

Werner, Florian ^{[1
]}

Limbach, Friederich ^{[1
]}

Schuhmann, Henning ^{[1
]}

Niermann, Tore ^{[1
]}

Seibt, Michael ^{[1
]}

Rizzi, Angela ^{[1
]}

机构：

[1] Univ Gottingen, Inst Phys 4, D-3400 Gottingen, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期

关键词：

D O I：

10.1002/pssc.200778596

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

InN-nanocolumns are an attractive system for light harvesting applications. To understand the mechanism of self organized growth of nanocolumns in plasma assisted MBE, InN samples were produced under various conditions on p-Si(111). Depending on the growth parameters different growth regimes for nanocolumns were identi-fled according to their final shape. High-resolution TEM pictures show a very good crystal quality. This is also confirmed by Raman and PL measurements. Nanocolumns with diameters of 20-200 nm and lengths of up to 2 mu m were produced. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1706 / 1708

页数：3

共 4 条

[1] InN, latest development and a review of the band-gap controversy [J].

Butcher, KSA ;

Tansley, TL .

SUPERLATTICES AND MICROSTRUCTURES, 2005, 38 (01) :1-37

[2] Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy [J].

Dimakis, E ;

Iliopoulos, E ;

Tsagaraki, K ;

Kehagias, T ;

Komninou, P ;

Georgakilas, A .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)

[3] MBE growth optimization of InN nanowires [J].

Stoica, T ;

Meijers, R ;

Calarco, R ;

Richter, T ;

Lüth, H .

JOURNAL OF CRYSTAL GROWTH, 2006, 290 (01) :241-247

[4] Temperature dependence of the fundamental band gap of InN [J].

Wu, J ;

Walukiewicz, W ;

Shan, W ;

Yu, KM ;

Ager, JW ;

Li, SX ;

Haller, EE ;

Lu, H ;

Schaff, WJ .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (07) :4457-4460

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