Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping

被引：88

作者：

Kazlauskas, K

Tamulaitis, G

Zukauskas, A

Khan, MA

Yang, JW

Zhang, J

Simin, G

Shur, MS

Gaska, R

机构：

[1] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania

[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[3] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[4] Rensselaer Polytech Inst, Broadband Ctr, Troy, NY 12180 USA

[5] Sensor Elect Technol Inc, Columbia, SC 29209 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 18期

关键词：

D O I：

10.1063/1.1625111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependences of the peak position and width of the photoluminescence band in Al0.1In0.01Ga0.89N layers were explained by Monte Carlo simulation of exciton localization and hopping. The introduction of a doubled-scaled potential profile due to inhomogeneous distribution of indium allowed obtaining a good quantitative fit of the experimental data. Hopping of excitons was assumed to occur through localized states distributed on a 16 meV energy scale within the In-rich clusters with the average energy in these clusters dispersed on a larger (42 meV) scale. (C) 2003 American Institute of Physics.

引用

页码：3722 / 3724

页数：3

共 22 条

[1] AlGaN single-quantum-well light-emitting diodes with emission at 285 nm [J].