Photovoltaic device on a single ZnO nanowire p-n homojunction

被引：46

作者：

Cho, Hak Dong ^{[1
]}

Zakirov, Anvar S. ^{[1
,2
]}

Yuldashev, Shavkat U. ^{[1
,2
]}

Ahn, Chi Won ^{[3
]}

Yeo, Yung Kee ^{[4
]}

Kang, Tae Won ^{[1
]}

机构：

[1] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[2] Uzbek Acad Sci, Dept Thermophys, Tashkent 700135, Uzbekistan

[3] Korea Adv Inst Sci & Technol, Nanomat Lab, Natl Nanofab Ctr, Taejon 305806, South Korea

[4] USAF, Inst Technol, Dept Engn Phys, Wright Patterson AFB, OH 45433 USA

来源：

NANOTECHNOLOGY | 2012年 / 23卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

SILICON NANOWIRES;

D O I：

10.1088/0957-4484/23/11/115401

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as- grown n-type segment and an in situ arsenic-doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions. Our results demonstrate that the present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nanoscale electronic, optoelectronic and medical devices.

引用

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