Single ZnO Nanowire/p-type GaN Heterojunctions for Photovoltaic Devices and UV Light-Emitting Diodes

被引：78

作者：

Bie, Ya-Qing ^{[1
]}

Liao, Zhi-Min ^{[1
]}

Wang, Peng-Wei ^{[1
]}

Zhou, Yong-Bo ^{[1
]}

Han, Xiao-Bing ^{[1
]}

Ye, Yu ^{[1
]}

Zhao, Qing ^{[1
]}

Wu, Xiao-Song ^{[1
]}

Dai, Lun ^{[1
]}

Xu, Jun ^{[1
]}

Sang, Li-Wen ^{[1
]}

Deng, Jun-Jing ^{[1
]}

Laurent, K. ^{[1
]}

Leprince-Wang, Y. ^{[2
]}

Yu, Da-Peng ^{[1
]}

机构：

[1] Peking Univ, Dept Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Univ Paris Est, Lab Phys Mat Divises & Interfaces LPMDI, CNRS UMR 8108, F-77454 Marne La Vallee 2, France

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 38期

关键词：

NANOROD ARRAYS; P-GAN; ELECTROLUMINESCENCE; SI;

D O I：

10.1002/adma.201000985

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We fabricate heterojunctions consisting of a single n-type ZnO nanowire and a p-type GaN film. The photovoltaic effect of heterojunctions exhibits open-circuit voltages ranging from 2 to 2.7 V, and a maximum output power reaching 80 nW. Light-emitting diodes with UV electroluminescence based on the heterojunctions are demonstrated.

引用

页码：4284 / +

页数：5

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