Integration of ZnO microcrystals with tailored dimensions forming light emitting diodes and UV photovoltaic cells

被引：98

作者：

Cole, Jesse J. ^{[1
]}

Wang, Xinyu ^{[1
]}

Knuesel, Robert J. ^{[1
]}

Jacobs, Heiko O. ^{[1
]}

机构：

[1] Univ Minnesota, Minneapolis, MN 55455 USA

来源：

NANO LETTERS | 2008年 / 8卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1021/nl0804809

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This article reports a new integration approach to produce arrays of ZnO microcrystals for optoelectronic and photovoltaic applications. Demonstrated applications are n-ZnO/p-GaN heterojunction LEDs and photovoltaic cells. The integration process uses an oxygen plasma treatment in combination with a photoresist pattern on magnesium doped GaN substrates to define a narrow sub-100 nm width nucleation region. Nucleation is followed by lateral epitaxial overgrowth producing single crystal disks of ZnO with desired size over 2 in. wafers. The process provides control over the dimensions (< 1% STD) and the location (0.7% STD pitch variation) of the ZnO crystals. The quality of the patterned ZnO is high; the commonly observed defect related emission in the electroluminescence spectra is completely suppressed, and a single near-band-edge UV peak is observed.

引用

页码：1477 / 1481

页数：5

共 27 条

[1] Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates [J].