A combined TEM and time-resolved optical reflectivity investigation into the excimer-laser crystallization of a-Si films

被引：16

作者：

Voogt, FC ^{[1
]}

Ishihara, R ^{[1
]}

机构：

[1] Delft Univ Technol, Delft Inst Microelect & Submicron Technol, Lab Elect Components Technol & Mat, NL-2600 GB Delft, Netherlands

来源：

THIN SOLID FILMS | 2001年 / 383卷 / 1-2期

关键词：

amorphous Si; thin films; excimer-laser crystallization; TEM;

D O I：

10.1016/S0040-6090(00)01626-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results are presented of cross-sectional transmission-electron microscopy and optical reflectivity investigations into the excimer-laser annealing of a-Si films. It is found that, in the initial stages of the excimer pulse, explosive crystallization leads to small, columnar and defect-rich grains. We discuss the evolution of this microstructure as the laser energy is slowly increased up to and beyond the super-lateral growth regime. We argue that melting along grain boundaries and defects is a crucial step in obtaining large single-crystalline grains. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：45 / 47

页数：3

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