Location control of large grain following excimer-laser melting of Si thin-films

被引：17

作者：

Ishihara, R ^{[1
]}

Burtsev, A ^{[1
]}

机构：

[1] Delft Univ Technol, Delft Inst Microelect & Submicron Technol, Lab Elect Components Technol & Mat, NL-2600 GB Delft, Netherlands

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期

关键词：

excimer-laser; nucleation control; single-crystal silicon; thin-film transistors; SOI;

D O I：

10.1143/JJAP.37.1071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a method to locate a large silicon (Si) crystal grain at a predetermined position on a glass substrate following excimer-laser melting of Si thin-film. The thickness of part of the intermediate insulator of the amorphous-Si (a-Si)/insulator/metal/glass structure was increased. After the irradiation by dual-beam light to both the back and front sides of the structure, a Si crystal grain as large as 4 mu m was located exactly at the center of the predetermined position, for wide range of diameter of the thick portion and irradiated light energy density.

引用

页码：1071 / 1075

页数：5

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