Excimer-laser-produced single-crystal silicon thin-film transistors

被引：41

作者：

Ishihara, R ^{[1
]}

Matsumura, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECT,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 10期

关键词：

excimer-laser crystallization; single-crystal silicon; thin-film transistors; displays; SOI;

D O I：

10.1143/JJAP.36.6167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-crystal silicon thin-film transistors (TFTs) were fabricated within an ultra-large grain thin film on a glassy substrate which was formed by an excimer-laser crystallization method. The field-effect mobility of the TFTs was 460 cm(2)/Vs for electrons. The off-current was less than 3 x 10(-13) A/mu m per unit channel width for a wide range of gate voltages.

引用

页码：6167 / 6170

页数：4

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