EFFECTS OF LIGHT-PULSE DURATION ON EXCIMER-LASER CRYSTALLIZATION CHARACTERISTICS OF SILICON THIN-FILMS

被引：53

作者：

ISHIHARA, R ^{[1
]}

YEH, WC ^{[1
]}

HATTORI, T ^{[1
]}

MATSUMURA, M ^{[1
]}

机构：

[1] MUSASHI INST TECHNOL,DEPT ELECT & ELECTR ENGN,SETAGAYA KU,TOKYO 158,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 4A期

关键词：

EXCIMER-LASER CRYSTALLIZATION; CRYSTALLIZED SILICON; THIN FILM TRANSISTOR; LIGHT PULSE DURATION; AMORPHIZATION; MU-CRYSTALLIZATION; VAPORIZATION;

D O I：

10.1143/JJAP.34.1759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The waveform of an excimer-laser light pulse has been varied using two laser systems with a delayed trigger. The effects of the pulse duration on the physical properties of crystallized silicon thin films were studied. From the results that threshold energies for crystallization, amorphization and ablation increased in proportion to the square root of light pulse duration, their critical temperatures were estimated to be 1000 degrees C, 1800 degrees C and 2700 degrees C, respectively. It was found that the critical temperature for mu-crystallzation is changed from about 2600 degrees C for a thin film under short pulse duration conditions to 1800 degrees C for a thick film under long pulse duration conditions. The long pulse is effective, but not drastic, in improving the poly-crystallized silicon film quality.

引用

页码：1759 / 1764

页数：6

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