Excimer-laser annealing technology for hydrogenated amorphous-silicon devices

被引：9

作者：

Kim, CD

Ishihara, R

Matsumura, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, 152, 2-12-1 O-okayama, Meguro-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 11期

关键词：

excimer laser annealing; hydrogenated amorphous silicon; XeF excimer laser; photonic effect; hydrogen eruption; thin-film transistor;

D O I：

10.1143/JJAP.34.5971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dehydrogenation characteristics have been investigated in detail for excimer-laser annealing of hydrogenated amorphous silicon (a-Si:H) films. Only the XeF excimer-laser light has a negligibly small photonic-dissociation rate of the Si-H bonds, and thus hydrogen atoms remain in the annealed film, resulting in highly conductive poly-Si film. The XeF excimer-laser annealing has been confirmed to be useful for fabricating high-performance a-Si:H thin-film transistors.

引用

页码：5971 / 5976

页数：6

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