LARGE-AREA DOPING PROCESS FOR FABRICATION OF POLY-SI THIN-FILM TRANSISTORS USING BUCKET ION-SOURCE AND XECL EXCIMER LASER ANNEALING

A large-area doping process for polycrystalline Si (poly-Si) thin-film transistor addressed liquid crystal displays (TFT/LCD's) has been developed. A large ion beam that was extracted from the bucket ion source and a XeCl excimer laser were utilized for impurity doping and impurity activation. A sufficiently low value of sheet resistance (500 +/- 25 OMEGA/open square) was obtained for an implantation time of 10 s. The poly-Si TFT's fabricated by using this technique have good characteristics and uniformity. This technique seems suitable for the fabrication of large area poly-Si TFT/LCD's.