XEF EXCIMER-LASER ACTIVATION OF ION-IMPLANTED DOPANTS IN HYDROGENATED AMORPHOUS-SILICON FILMS

被引：1

作者：

KIM, CD

MATSUMURA, M

机构：

[1] Tokyo Institute of Technology, Meguro-ku, Tokyo, 152

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 4B期

关键词：

ION IMPLANTATION; HYDROGENATED AMORPHOUS-SILICON (A-SI-H); LASER ANNEALING; XEF EXCIMER LASER; CONDUCTIVITY; THIN-FILM TRANSISTOR (TFT);

D O I：

10.1143/JJAP.34.L479

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

XeF excimer-laser annealing was found to be very effective for activating ion-implanted dopants in hydrogenated amorphous-silicon (a-Si:H) films at room temperature, because of the low photon energy of the XeF excimer-laser light. The XeF excimer-laser-annealed a-Si:H films showed conductivity as high as 5 x 10(-3) S/cm with the phosphorus atom dosage of 1 x 10(-6) cm(-2) without post-hydrogenation. With XeF excimer-laser annealing and ion implantation, the threshold voltage of a-Si:H thin-film transistors could be changed by more than 20 V without deterioration of on-characteristics.

引用

收藏

页码：L479 / L482

页数：4

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